Today (March 1, 2019) is the Memorial Day of Zhores Alferov, who discovered that different materials can be used to make laser light.
Zhores Ivanovich Alferov was born on March 15, 1930, in Vitebsk,
Belarus, Soviet Union. Alferov graduated from secondary school in Minsk in 1947
and started Belarusian Polytechnic Academy. In 1952, he received his B.S. from
the V. I. Ulyanov (Lenin) Electrotechnical Institute (LETI) in Leningrad.
Starting in 1953, Alferov worked in the Ioffe Physical-Technical Institute of
the USSR Academy of Sciences. From the institute, he earned several scientific
degrees: a Candidate of Sciences in Technology in 1961 and a Doctor of Sciences
in Physics and Mathematics in 1970.
Starting at Ioffe Institute in 1953, Alferov worked with a group led by
Vladimir Tuchkevich, who became director of the Ioffe Institute in 1967, on
planar semiconductor amplifiers for use in radio receivers. These planar
semiconductor amplifiers would be referred to as transistors in the present
day. Alferov's contribution included work on germanium diodes for use as a
rectifier. In the early 1960s, Alferov organized an effort at Ioffe Institute
to develop semiconductor heterostructures. Semiconductor heterojunctions
transistors enabled higher frequency use than their homojunction predecessors,
and this capability plays a key role in modern mobile phone and satellite
communications. Alferov and colleagues worked on GaAs and AlAs III-V heterojunctions.
A particular focus was the use of heterojunctions to create semiconductor
lasers capable of lasing at room temperature.
In 1963, Alferov filed a patent application proposing
double-heterostructure lasers; Herbert Kroemer independently filed a US patent
several months later. In 1966, Alferov's lab created the first lasers based on
heterostructures, although they did not lase continuously. Then in 1968,
Alferov and coworkers produced the first continuous-wave semiconductor
heterojunction laser operating at room temperature. This achievement
came a month ahead of Izumo Hayashi and Morton Panish of Bell Labs also
producing a continuous-wave room-temperature heterojunction laser. It was for
this work that Alferov received the 2000 Nobel Prize in Physics together with
Herbert Kroemer, "for developing semiconductor heterostructures used in
high-speed- and optoelectronics".
In the 1960s and 1970s Alferov continued his work on the physics and
technology of semiconductor heterostructures in his lab at the Ioffe Institute.
Alferov's investigations of injection properties of semiconductors and his
contributions to the development of lasers, solar cells, LEDs, and epitaxy
processes, led to the creation of modern heterojunction physics and electronics.
The development of semiconductor heterojunctions revolutionized semiconductor
design and had a range of immediate commercial applications including LEDs,
barcode readers and CDs. Hermann Grimmeiss of the Royal Swedish Academy of
Sciences, which awards Nobel prizes, said: "Without Alferov, it would not
be possible to transfer all the information from satellites down to the Earth
or to have so many telephone lines between cities."
Alferov had an almost messianic conception of heterostructures, writing:
"Many scientists have contributed to this remarkable progress, which not
only determines in large measure the future prospects of solid-state physics
but in a certain sense affects the future of human society as well." They are famous for
their research into how a laser beam can be combined to make a laser beam. Zhores
Alferov, who discovered that different materials can be used to make laser
light, passed away on March 1, 2019, at the age of 88 in St. Petersburg.
Source By: Wikipedia
Information: Ramesh, Assistant Professor of Physics, Nehru Memorial
College, Puthanampatti, Trichy.
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